✦ LIBER ✦
Suppression of the boron penetration induced dielectric degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET
✍ Scribed by Shye Lin Wu; Chung Len Lee; Tan Fu Lei
- Book ID
- 114536407
- Publisher
- IEEE
- Year
- 1996
- Tongue
- English
- Weight
- 849 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0018-9383
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