Growth mechanism of InAsβInSb heterostru
β
Lorenzo Lugani; Daniele Ercolani; Fabio Beltram; Lucia Sorba
π
Article
π
2011
π
Elsevier Science
π
English
β 304 KB
We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n