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Suppression of In surface segregation and growth of modulation-doped N-AlGaAs/InGaAs/GaAs structures with a high In composition by molecular-beam epitaxy

✍ Scribed by Toyoshima, Hideo; Niwa, Takaki; Yamazaki, Jin; Okamoto, Akihiko


Book ID
121836305
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
950 KB
Volume
75
Category
Article
ISSN
0021-8979

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