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Suppression of antistructural defects in crystals by an increased polarization of bonds

✍ Scribed by Horák, J.; Lošťák, P.; Beneš, L.

Book ID
119947493
Publisher
Taylor and Francis Group
Year
1984
Tongue
English
Weight
429 KB
Volume
50
Category
Article
ISSN
1364-2812

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Extended Defects Formation in Si Crystal
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In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}-and {113}-habit planes both leading to an extended defect formation in Si crystals.