Precursor MgB thin films were prepared on sapphire substrates by magnetron sputtering. Influence of the ex situ annealing process on the roughness of the superconducting MgB 2 thin films is discussed. Optimized annealing process of MgB precursor thin films in vacuum results in smooth superconducting
Superconductivity of nano-TiO2-added MgB2
β Scribed by H. Kishan; V.P.S. Awana; T.M. de Oliveira; Sher Alam; M. Saito; O.F. de Lima
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 854 KB
- Volume
- 458
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
We report on the synthesis, phase formation, microstructure, and magnetization, of nano(n)-TiO 2 -added MgB 2 polycrystalline compounds. The added n-TiO 2 amounts are varied from 1% to 15% in weight (wt). All the studied samples are near single phase with small amounts of un-reacted Mg/MgO up to 10 wt%. The 15 wt% n-TiO 2 added sample seems to be a multi-phase compound with unusual broadening of the main MgB 2 reflection and additional unidentified lines in its X-ray diffraction (XRD) pattern. The superconducting transition temperature (T c ), as measured by magnetization experiments, decreases marginally with n-TiO 2 addition, for example the T c s are at 37.5 K and 35.5 K, respectively, for pristine and 10 wt% n-TiO 2 -added samples. This indicates that Ti has not significantly substituted into the host MgB 2 lattice. The grain morphology of these compounds reveals porous regions and does not change much with TiO 2 addition. High resolution transmission electron microscopy (HRTEM) studies revealed the presence of n-TiO 2 in these samples. The critical current density (J c ) of the MgB 2 -n-TiO 2 samples, as estimated using the Bean model, shows better performance under magnetic fields above 3 T than pristine MgB 2 for up to 4 wt% of addition, and decreases rapidly for additions above 6 wt%. We conclude that n-TiO 2 helps in enhancing the flux pinning centers in MgB 2 superconductor and hence improves the J c (H) performance for additions up to 4 wt% in fields above 3 T.
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