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Superconductivity and disorder-driven metal-insulator transition in quench-condensed tin films

✍ Scribed by R. S. Markiewicz; C. A. Shiffman; Wen Ho

Publisher
Springer US
Year
1988
Tongue
English
Weight
856 KB
Volume
71
Category
Article
ISSN
0022-2291

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✦ Synopsis

We have studied the effects of disorder in a series of Sn films quench-condensed onto cryogenically cooled substrates. We find a simple scaling of the conductivity with film thickness r ~ (d -de)', with v ~ 0.85, and a metal-insulator transition near dc~40-50A. The superconducting transition temperatures depend linearly on l/d, provided d is not too small, and the films exhibit strong annealing effects. These fea'tures are explained using a model in which grain boundary scattering dominates intragrain scattering.

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## Abstract The low temperature electronic transport of highly boron‐doped nanocrystalline diamond films is studied down to 300 mK. The films show superconducting properties with critical temperatures __T__~c~ up to 2.1 K. The metal–insulator and superconducting transitions are driven by the dopant