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Super-lateral-growth regime analysis in long-pulse-duration excimer-laser crystallization of a-Si films on SiO2

โœ Scribed by E. Fogarassy; S. de Unamuno; B. Prevot; P. Boher; M. Stehle; D. Pribat


Publisher
Springer
Year
1999
Tongue
English
Weight
450 KB
Volume
68
Category
Article
ISSN
1432-0630

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In this work, an efficient two-dimensional numerical model is built to predict the critical fluences (Fc) during the irradiation of excimer laser on a-Si films. One aim of this paper is the modeling of conduction heat transfer with phase change. The specific heat/enthalpy method is used to handle th