## Abstract Sum frequency generation (SFG) involving an ultrafast infrared pulse and a 787 nm up‐conversion pulse mixed at the surface of planar or porous Si as well as planar GaAs has been studied. We demonstrate that SFG data can be obtained while porous silicon is in contact either with an aqueo
Sum-frequency generation from surface species in porous silicon
✍ Scribed by Mattei, G. ;Valentini, V. ;Yakovlev, V. A. ;Mani, A. A. ;Sartenaer, Y. ;Thiry, P. A. ;Peremans, A. ;Caudano, Y. ;Dreesen, L. ;Humbert, C. ;Busson, B. ;Vidal, F. ;Tadjeddine, A.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 136 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
For the first time, the sum‐frequency generation (SFG) spectra of surface species have been measured in porous silicon (PS) layers. The range of the vibrations 2000–2300 cm^–1^ for the native species Si–H~x~ has been explored. Furthermore for the studied mesoporous materials, it has been found that, as opposed to the infrared absorption, the SFG signal increases with porosity. Finally, the angular dependence and the enhancement of the SFG signal were measured in a one‐dimensional PS photonic crystal structure with a defect producing an energy level in the photonic band gap. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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