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Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

✍ Scribed by Csepregi, L.; Kennedy, E. F.; Mayer, J. W.; Sigmon, T. W.


Book ID
118041763
Publisher
American Institute of Physics
Year
1978
Tongue
English
Weight
693 KB
Volume
49
Category
Article
ISSN
0021-8979

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