✦ LIBER ✦
Substrate-effect-dependent scattering parameter extraction of short-gate-length IGFET for microwave frequency applications
✍ Scribed by Anisha Goswami; Anju Agrawal; Srikanta Bose; S. Haldar; M. Gupta; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 317 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
A model is de¨eloped considering the substrate effect, fringing field effect, and gate and drain contact pad effect to e¨aluate the scattering parameters for a short-gate-length insulated gate field-effect transistor by extracting the admittance parameters for its microwa¨e frequency applications. The parasitic elements are also incorporated in the analysis, and the merits of different de¨ice dimensions are shown in terms ¨arious gains at microwa¨e frequencies.