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Substitutional n-Type Doping of an Organic Semiconductor Investigated by Electron Paramagnetic Resonance Spectroscopy

✍ Scribed by Chen, Si-Guang; Branz, Howard M.; Eaton, Sandra S.; Taylor, P. Craig; Cormier, Russell A.; Gregg, Brian A.

Book ID
127086247
Publisher
American Chemical Society
Year
2004
Tongue
English
Weight
336 KB
Volume
108
Category
Article
ISSN
0022-3654

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## Abstract Electron paramagnetic resonance technique has been applied to identify the microscopic origin of the n‐type conductivity in phosphorus‐doped {111}‐homoepitaxial diamond films grown by chemical vapor deposition. The NIMS‐1 center having the __D__ ~2d~ symmetry with __g__ ~||~ = 1.9983, _