Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering

✍ Scribed by Hu, S.Y.; Peters, M.G.; Young, D.B.; Gossard, A.C.; Coldren, L.A.

• Book ID: 119784836
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 320 KB
• Volume: 7
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/68.393182