Submicron particle removal in post-oxide chemical–mechanical planarization (CMP) cleaning

Pad Surface Roughness and Slurry Particl

Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization

✍ C. Wang; P. Sherman; A. Chandra; D. Dornfeld 📂 Article 📅 2005 🏛 International Academy for Production Engineering 🌐 English ⚖ 677 KB

The ability to predict material removal rates in chemical mechanical planarization (CMP) is an essential ingredient for low cost, high quality IC chips. Recently, models that address the slurry particles have been proposed. We address three such models. The first two differ only in how the number of