Sub-μm steps on facet planes in pulled GaSb crystals
✍ Scribed by Associate Prof. Dr. M. Kumagawa; Y. Hayakawa; Mr F. Ishino; Prof. Dr. S. Yamada
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 212 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
Sub-pm Steps on Facet Planes in Pulled GaSb Crystals
A facet is well known to occur frequently in pulled crystals, and its growth plane is formed as a result of the laterally rapid motion of steps due to two-dimensional nucleation (TRAINOR et al.). Therefore, the facet plane has been considered to show very good flatness through the whole plane. Recently, steps with height of 0.4 to 0.7 nm were found on the facet planes of solution grown GaAs epitaxial layers (BAUSER et al.). In this note, steps of the sub-pm order are reported to be observed on facet planes in pulled GaSb crystals.
GaSb cystals doped with Te were pulled in the [TTT] direction with crystal rotation of 23 rpm. Their diameters were 3 to 8 mm. In order to reveal instantaneous growth morphologies, markers of impurity striations due to electric current pulses were introduced into crystals during growth (LICHTENSTEIGER et al.). Pulses were 20 A in height and 10 ms in width at a frequency of 10 Hz. Pulled crystals were cut to (1TO) planes along the growth axis.
Cut surfaces were polished and etched with a permanganate solution of KMnO,, HF, and CHJOOH (WITT). The growth morphology was observed under an interference contrast microscope. The growth rate was obtained from both the pulse repetition and spacings between markers.