Sub quarter-micron bilayer electron beam resist with enhanced sensitivity
✍ Scribed by K Elian; W.-D Domke; E Günther; M Irmscher
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 620 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
Because of the need for 100 nm structures in the very near future, Electron Beam Lithography (E-beam) as a means for high resolution lithography is discussed not only to be used for ASICs or mask fabrication, but also for the application in a standard lithographic production. Besides the improvement of new E-beam writing concepts with the necessary enhanced hardware, the development of new resist systems and processes is a main objective for a high throughput production. This paper reports about a new bilayer E-beam resist system based on the CARL process (Chemical Amplification of Resist Lines). It comprises chemical amplification in a thin top-resist layer, wet silylation after the standard wet development and dry development in an oxygen plasma to transfer the structures into the thick bottom layer. The achievable resolution could be shown to be better than 0,15 mm lines and spaces. The development of new photoactive compounds in combination with a 2 fluorene carboxylic acid senzitizer yields sensitivities of only 1 mC / cm at an electron energy of 30 keV.