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Sub-half micrometer gate lift-off by three layer resist process via electron beam lithography for gallium arsenide monolithic microwave integrated circuits (MIMICs) : R M NAGARAJAN, S D RASK, M R KING, T K YARD (Gallium Arsenide Components Group, Unisys Corp., Eagan, MN, USA) Proc. SPIE — Int. Soc. Opt. Eng. (USA), vol. 923, pp. 194–200 (1988). (Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VII, Santa Clara, CA, USA, 2–4 March 1988)

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
103 KB
Volume
20
Category
Article
ISSN
0026-2692

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Electron beam/optical hybrid lithography
Electron beam/optical hybrid lithography for the production of gallium arsenide monolithic microwave integrated circuits (MIMICs) : R M NAGARAJAN, S D RASK (Gallium Arsenide Components Group, Unisys Corp., Eagan, MN, USA) Proc. SPIE — Int. Soc. Opt. Eng. (USA), vol. 923, pp. 266–273 (1988). (Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VII, Santa Clara, CA, USA, 2–4 March 1988)
📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 103 KB