Study on shaped single crystal growth and scintillating properties of Bi-doped rare-earth garnets

✍ Scribed by A. Novoselov; A. Yoshikawa; M. Nikl; N. Solovieva; T. Fukuda

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 165 KB
• Volume: 40
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200410360

✦ Synopsis

Abstract

Shaped single crystals of Bi:Gd~3~Ga~5~O~12~ (Bi = 0.102, 0.126 and 0.141 mol.%) and Bi:Y~3~Ga~5~O~12~ (Bi = 0.041, 0.047 and 0.061 mol.%) were grown by the micro‐pulling‐down method. Measured optical absorption spectra show an absorption band round 290 nm ascribed to the lowest energy 6s^2^→6s6p transition of Bi^3+^. Difference in the position of the emission spectra of Bi‐related bands in Gd~3~Ga~5~O~12~ (470 nm) and Y~3~Ga~5~O~12~ (314 nm) was explained by the lower local distortion of Bi polyhedron in Y~3~Ga~5~O~12~ host leading to smaller Stokes shift of only 0.36 eV. Unsuitability of Bi‐doping in the Gd~3~Ga~5~O~12~ host to get energy transfer from Gd^3+^ towards Bi^3+^ centers was concluded, while Bi‐doped Y~3~Ga~5~O~12~ could compete against Bi~4~Ge~3~O~12~ scintillator. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)