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Study on H atoms diffusion and adsorption properties of MgH2-V systems

✍ Scribed by DianWu Zhou; JinShui Liu; Ping Peng


Book ID
107355028
Publisher
SP Science China Press
Year
2008
Tongue
English
Weight
370 KB
Volume
51
Category
Article
ISSN
1006-9321

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## Abstract The adsorption and diffusion of N atoms on the three low‐index Cu planes were studied using 5‐parameter Morse potential (5‐MP) method, and the best theory‐experiment agreement was obtained. N atom of Cu(100) surface sit on the fourfold hollow site with the vertical height of 0.018 nm cl