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Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

✍ Scribed by X.M. Yang; T. Yu; X.M. Wu; L.J. zhuge; S.B. Ge; J.J. He

Book ID: 116244409
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 722 KB
Volume: 257
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.04.143

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