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Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

✍ Scribed by Yu. N. Drozdov; A. V. Novikov; M. V. Shaleev; D. V. Yurasov


Book ID
111444610
Publisher
Springer
Year
2010
Tongue
English
Weight
289 KB
Volume
44
Category
Article
ISSN
1063-7826

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