Study of the local structure of GaxIn1−xAsySb1−y, a quaternary III–V semiconductor alloy, using extended x-ray absorption fine structure (EXAFS) technique

✍ Scribed by Shaheen M. Islam; Bruce A. Bunker

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 168 KB
• Volume: 158
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(89)90405-5

✦ Synopsis

Using the extended x-ray absorption fine structure (EXAFS) technique, we have investigated the local structure of the quaternary alloy series Ga~nI_#sySbI_y. Our measurements reveal the types of atoms about the "average" As atom and their nearest-neighbor distances. We observed the deviation from random site occupation with Ga-As and In-Sb pairs being clearly preferred. This result was compared with a recent theoretical model. The near-neighbor distances were found to be nearly constant, in agreement with the results found for different ternary and quaternary alloys.