Study of the electron capture coefficient of substitutional neutral boron atoms in silicon at low temperatures II. Theoretical study

✍ Scribed by Heckmann, M. ;Barrau, J. ;Pugnet, M. ;Brousseau, M.

• Book ID: 105369624
• Publisher: John Wiley and Sons
• Year: 1973
• Tongue: English
• Weight: 407 KB
• Volume: 20
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2210200117