The damage evolution due to high electronic energy deposition during 375 MeV Xe and 593 MeV Au ion irradiation was studied in the semiconductors InP, GaP, GaAs, AlAs and Ge using RBS and TEM. In InP the high electronic energy deposition leads to the formation of amorphous tracks. In the other materi
✦ LIBER ✦
Study of the effect of high electronic excitations in quasicrystals irradiated with heavy ions
✍ Scribed by Gerrit Coddens; Annie Dunlop; Hichem Dammak; Ratnamala Chatterjee; Yvonne Calvayrac; Marianne Quiquandon; Erik Elkaı̈m; Mark Gailhanou; Stéphan Rouzière
- Book ID
- 114167465
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 282 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0168-583X
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