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Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

✍ Scribed by M.S. Rahman; E.K. Evangelou; I.I. Androulidakis; A. Dimoulas


Book ID
108210790
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
450 KB
Volume
49
Category
Article
ISSN
0026-2714

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