✦ LIBER ✦
Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics
✍ Scribed by Borse, D.G.; Vaidya, S.J.; Chandorkar, A.N.
- Book ID
- 114539056
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 242 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9383
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