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Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending

✍ Scribed by H. Idrissi; G. Regula; M. Lancin; J. Douin; B. Pichaud


Book ID
104557178
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
527 KB
Volume
2
Category
Article
ISSN
1862-6351

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