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Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon
✍ Scribed by Zhang, Jiaguo ;Pintilie, Ioana ;Fretwurst, Eckhart ;Klanner, Robert ;Perrey, Hanno ;Schwandt, Joern
- Book ID
- 114529213
- Publisher
- International Union of Crystallography
- Year
- 2012
- Tongue
- English
- Weight
- 918 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0909-0495
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