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Study of polyaniline by positron annihilation technique

✍ Scribed by Peng, Z.L.; Li, S.Q.; Dai, Y.Q.; Wang, B.; Wang, S.J.; Liu, H.; Xie, H.Q.


Book ID
122860983
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
386 KB
Volume
64
Category
Article
ISSN
0379-6779

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Helium-implanted vanadium, subjected to isochronal annealing treatment, has been studied using the positron annihilation technique. The helium decorating vacancies and loops become dissociated above 600Β°C and these defects anneal out upon further annealing up to 950Β°C. Between 350 and 550Β°C, a fract