Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

✍ Scribed by A.L Parakhonsky; E.B Yakimov; D Yang

• Book ID: 104305784
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 76 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00912-7

✦ Synopsis

Gold and hydrogen diffusion in Czochralski grown Si with and without nitrogen, has been studied. It was found that the Au concentration after diffusion at 700, 750 and 800 8C in nitrogen-doped Si is always less than that in Si without nitrogen. A decrease of Au concentration in nitrogen-doped crystals is explained under the assumption that nitrogen stimulates oxygen precipitation. It is shown that the hydrogen penetration depth under wet chemical etching into nitrogen-doped samples is larger than that into Si without nitrogen that is explained by the nitrogen effect on the formation of oxygen-related traps for hydrogen.