๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Study of new surface structures created on sapphire by Co ion implantation

โœ Scribed by C Marques; M.M Cruz; R.C da Silva; E Alves


Book ID
114164482
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
108 KB
Volume
175-177
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Comparison of surface layers on copper,
โœ Kraft, G. ;Flege, S. ;Baba, K. ;Hatada, R. ;Ensinger, W. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 674 KB

## Abstract Two carbide forming metals, titanium and tantalum, and a typical non carbide former, copper, were treated by methane plasma immersion ion implantation. The polished metal samples were exposed to high voltage pulses at โ€“20 kV in an atmosphere of methane. The lateral distribution of the c

Study of structure and surface modificat
โœ Rucha H. Polji; A.D. Yadav; S.K. Dubey; P. Kumar; D. Kanjilal ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 683 KB

Silicon oxynitride (Si x O y N z ) buried layers were synthesized by high fluence (โ‰ฅ 1 ร— 10 17 ions-cm -2 ) ion implantation of O + and N + sequentially into single crystal silicon at 150 keV to produce silicon-on-insulator (SOI) structures. The structures of the SOI devices were analyzed by FTIR an