Diffusion behavior of implanted Li ions
Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry
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F. Salman; L. Chow; B. Chai; F.A. Stevie
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Article
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2006
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Elsevier Science
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English
โ 210 KB
Lithium ions with dosages of 2.6 ร 10 12 , 2.6 ร 10 13 , 2.6 ร 10 14 , and 2.6 ร 10 15 cm ร2 have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass