Study of ionization processes during TOF-SIMS analysis by co-sputtering cesium and xenon

On the understanding of positive and neg

On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon

✍ J. Brison; J. Guillot; B. Douhard; R.G. Vitchev; H.-N. Migeon; L. Houssiau 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 476 KB

In this paper, ionization processes of secondary ions during ToF-SIMS dual beam depth profiling were studied by co-sputtering with 500 eV cesium and xenon ions and analyzing with 25 keV Ga + ions. The Cs/Xe technique consists in diluting the cesium sputtering/etching beam with xenon ions to control