Study of energy broadening of high-brightness ion beams from a surface plasma Penning source and its relevance in ion projection lithography
✍ Scribed by S.K. Guharay; E.A. Sokolovsky; M. Reiser; J. Orloff; J. Melngailis
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 310 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
The energy spread AE (Full Width at Half Maximum of the energy distribution) of negative hydrogen ion (H-) beams has been measured for angular beam intensifies (In) over a range of about 40 to 100 mA/sr. An In ~3 dependence of the energy spread is observed. This trend supports the mechanism of energy broadening due to potential energy relaxation. The observed energy spread of ~ 3 eV at I n of about 40 mA/sr projects a favorable scenario toward the demand of a future production-line ion projection lithography system. The maximum value of In/AE 2 = 4 mA/sr eV 2 suggests the possibility of H" beams for ion microscopy and surface analysis applications also. The H ion source is currently operated in pulsed mode (maximum duty of 1% --1 ms, 10 Hz); cw operation can be achieved by improving the cooling system of the electrodes.