Study of Drain Induced Barrier Lowering(DIBL) Effect for Strained Si nMOSFET

✍ Scribed by JiangTao Qu; HeMing Zhang; XiaoBo Xu; ShanShan Qin

• Book ID: 119353604
• Publisher: Elsevier
• Year: 2011
• Tongue: English
• Weight: 276 KB
• Volume: 16
• Category: Article
• ISSN: 1877-7058
• DOI: 10.1016/j.proeng.2011.08.1087