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Study of defects in thermal SiO2 grown in the presence of 1,1,1-trichloroethane by Wright etchant : R. K. Bhan. Microelectron. J.22(3), 17 (1991)


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
130 KB
Volume
32
Category
Article
ISSN
0026-2714

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