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Study of charge-carrier relaxation in a disordered organic semiconductor by simulating impedance spectroscopy

✍ Scribed by Mesta, M.; Cottaar, J.; Coehoorn, R.; Bobbert, P. A.


Book ID
126316904
Publisher
American Institute of Physics
Year
2014
Tongue
English
Weight
578 KB
Volume
104
Category
Article
ISSN
0003-6951

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## Abstract Two types of Si/SiO~2~/pentacene organic field‐effect transistors (OFET) with bottom Au‐source (S) and – drain (D) electrodes were examined by charge transient spectroscopy (QTS), applying pulsed bias Ξ”__U__ ~DS~ to the channel of an OFET with floating gate electrode. The transient char