Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p+-n junction diodes. II. Dynamic breakdown properties

✍ Scribed by Neudeck, P.G.; Fazi, C.

• Book ID: 114537576
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 230 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.748866