Study of basic mechanisms of single event upset in low-capacitance Si and GaAs diodes using high-energy microbeams

✍ Scribed by T. Nishijima; H. Sekiguchi; S. Matsuda; M. Takeuchi; N. Shiono; H. Anayama; A. Mirio

• Book ID: 113286614
• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 470 KB
• Volume: 104
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/0168-583x(95)00465-3