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Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

✍ Scribed by Gowrish K. Rao; Kasturi V. Bangera; G.K. Shivakumar


Book ID
108271843
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
536 KB
Volume
56
Category
Article
ISSN
0038-1101

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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 Β°C without thermal annealing and allowing the integration w