Studies on non-thermal atmospheric pressure plasma process conditions for groove formation on silicon nitride for silicon solar cells
✍ Scribed by Toshiyuki Hamada; Tatsuya Sakoda; Masahisa Otsubo
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 475 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1369-8001
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✦ Synopsis
Fabrications of narrow electrode grooves for front electrodes on single crystalline silicon solar cells were examined using surface discharges, in which the electrode grooves were formed by etching a silicon nitride (SiN) film on substrates. The surface discharge could effectively etch the SiN film within 10 s and that a high etching rate more than 1800 nm/ min was obtained. An optimum ratio of Ar gas, which was enough to maintain the formation of innumerable surface streamers, was 2.3 times larger than that of etching gas, and a short-term etching with the high discharge voltage was effective to narrow groove width.