Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

✍ Scribed by A. Plecenik; M. Tomasek; T. Plecenik; M. Truchly; J. Noskovic; M. Zahoran; T. Roch; M. Belogolovskii; M. Spankova; S. Chromik; P. Kus

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 615 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.03.018

✦ Synopsis

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa 2 Cu 3 O 7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa 2 Cu 3 O 7-x thin film-PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa 2 Cu 3 O 7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.