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Studies of large scale unstable growth formed during GaAs(001) homoepitaxy

โœ Scribed by C. Orme; M.D. Johnson; K.-T. Leung; B.G. Orr; P. Smilauer; D. Vvedensky


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
949 KB
Volume
150
Category
Article
ISSN
0022-0248

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The temporal evolution of the step bunching instability formed during GaAs homoepitaxial growth on the GaAs(110) vicinal to (111)A has been studied by atomic force microscopy (AFM) and the step -step distribution has been quantified as a function of deposition time. Analysis of the AFM data has show