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Structures of XH32+ (X=C, Si and Ge) and isoelectronic XH3+ (X=B, Al and Ga)

โœ Scribed by Golam Rasul; G.K.Surya Prakash; George A Olah


Book ID
114143130
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
79 KB
Volume
455
Category
Article
ISSN
0166-1280

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๐Ÿ“œ SIMILAR VOLUMES


Local spin density calculations for XH3-
โœ A. Selmani; D.R. Salahub ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 301 KB

Linear combination of Gaussian-type orbital-local spin density (LCGTO LSD) calculations have been performed from the XHS radical (X=C, Si, Ge and Sn). These calculations show, in agreement with experiment and with other calculations, that, within the LSD approximation, CH, is planar whereas SiH,, Ge

Gas-phase reactions of XH3+ (X = C, Si,
โœ Paola Antoniotti; Lorenza Operti; Roberto Rabezzana; Francesca Turco; Cristina Z ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 507 KB

## Abstract The gasโ€phase reaction of CH~3~^+^ with NF~3~ was investigated by ion trap mass spectrometry (ITMS). The observed products include NF~2~^+^ and CH~2~F^+^. Under the same experimental conditions, SiH~3~^+^ reacts with NF~3~ and forms up to six ionic products, namely (in order of decreasi