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Structure-related conduction properties of sputtered nitrogen-doped tantalum films

โœ Scribed by F. Briones; D. Golmayo

Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
33 KB
Volume
57
Category
Article
ISSN
0040-6090

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## Abstract Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and crystalline silicon (111) substrates held at room temperature by sputtering of tantalum in an oxygen partial pressure of 1x10^โ€4^ mbar. The films were annealed in air for an hour in the