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Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

✍ Scribed by Liu, J. Q.; Skowronski, M.; Hallin, C.; Söderholm, R.; Lendenmann, H.


Book ID
120392143
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
622 KB
Volume
80
Category
Article
ISSN
0003-6951

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