✦ LIBER ✦

Structure of hydrogenated SiGe and SiSiNx amorphous semiconductor heterojunctions

✍ Scribed by F. Sette; B. Abeles; L. Yang; A. McDowell; D. Norman; C.H. Richardson

Book ID: 118334066
Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 186 KB
Volume: 97-98
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(87)90215-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deposition mechanism of hydrogenated amo

Deposition mechanism of hydrogenated amorphous SiGe Films

✍ K. Tanaka; A. Matsuda 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 347 KB

Spin-resonance spectroscopy of hydrogena

Spin-resonance spectroscopy of hydrogenated amorphous CSiGe alloys

✍ F. Demichelis; C.F. Pirri; E. Giamello 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 348 KB

Infrared absorption of hydrogenated amor

Infrared absorption of hydrogenated amorphous SiC and GeC films

✍ Y. Catherine; G. Turban 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 183 KB

Optical absorption and disorder in hydro

Optical absorption and disorder in hydrogenated amorphous SiGe and SiC alloy systems

✍ R Tsu; P Menna; A.H Mahan 📂 Article 📅 1987 🏛 Elsevier Science ⚖ 237 KB

The slope of (ah¢o) 1/2 vs. h¢o depends on the product of the oscillator strength of the transition, the deformation potential and the mean deviation of the atomic coordinates. In a perfect crystal, this deviation is characterized by phonons, whereas in amorphous silicon (a-Si) and amorphous germani

ESR studies on sputtered amorphous SiC,

ESR studies on sputtered amorphous SiC, SiGe and GeC films

✍ T. Shimizu; M. Kumeda; Y. Kiriyama 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 245 KB

Band offsets in SiSi1−xGex and GeSi1−x

Band offsets in SiSi1−xGex and GeSi1−xGex strained heterojunctions

✍ A. Muñoz; L. Brey; C. Tejedor 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 281 KB