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Structure of heteroepitaxial GaAs on Si

โœ Scribed by H. Zabel; N. Lucas; R. Feidenhans'l; J. Als-Nielsen; H. Morkoc


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
273 KB
Volume
3
Category
Article
ISSN
0749-6036

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Photodetectors fabricated on heteroepita
โœ N.A. Papanicolaou; G.W. Anderson; J.A. Modolo; A. Georgakilas ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 562 KB

Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th