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Structure dependence of radiation damage depths after ion implantation

✍ Scribed by E. Friedland; M. Fletcher


Book ID
113282936
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
362 KB
Volume
64
Category
Article
ISSN
0168-583X

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Implantation angle dependence of ion irr
✍ J Nord; K Nordlund; B Pipeleers; A Vantomme πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 58 KB

We use molecular dynamics (MD) simulations to study the effect of the implantation angle on the damage produced during ion beam irradiation of GaN. We bombard 5 keV Er ions at perfect wurtzite GaN with incident angles of 0 β€’ -22 β€’ angle against the [0 0 0 1] crystal axis. The simulations reproduce t