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Structure, chemical bonding and electrochemical behavior of heteroatom-substituted carbons prepared by arc discharge and chemical vapor deposition

โœ Scribed by Tsuyoshi Nakajima; Meiten Koh; Toshiyuki Katsube

Book ID
114370189
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
591 KB
Volume
2
Category
Article
ISSN
1293-2558

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โœ M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 560 KB

Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process