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Structure and ultraviolet photoluminescence of 3C-SiC films grown on Si(111)

✍ Scribed by L. K. Orlov; Yu. N. Drozdov; N. A. Alyabina; N. L. Ivina; V. I. Vdovin; I. N. Dmitruk

Book ID
111446381
Publisher
SP MAIK Nauka/Interperiodica
Year
2009
Tongue
English
Weight
716 KB
Volume
51
Category
Article
ISSN
1063-7834

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## Abstract This paper reports the MOVPE growth of InN on a 3c‐SiC/Si template formed by C^+^‐ion implantation into Si(111). Properties of grown films on the template are compared with those grown on sapphire in the same run. By employing the nitridation process of the template at 900 Β°C for 30 min